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OS-5500 Series (High-temperature type)

Specifications
n Suitable for Ohmic electrode alloy and anneal for wide-gap semiconductor (GaN, SiC, et.)
n Use of small-size special high-temperature furnace
n Temperature zone for common use
: 800 - 1200 degree Celsius (MAX1300deg.)
n Distribution of in- plane temperature
: 4 inch wafer in-plane}3 deg.(at 1200 deg.)
(On 0.5mm-thick carbon tray)
n Compatible size of substrate
3 - 6 inch
n Wafer conveyance
: Single-wafer processing robot conveyance @(adapted to 25 cassettes)
n Treatment atmosphere
: Inert gas or during decompression
n Standard size of equipment
F@1,000ivj~1,750icj~1,450igj
n Weight of equipment
: Approx. 950 kg


OS-4500 Series (Mid-temperature type)

Specifications
n Suitable for various alloy and anneal
n Use of small-size special high-temperature furnace
n Temperature zone for common use
: 500 - 800 degree Celsius (MAX 850 deg.)
n Distribution of in- plane temperature
: 4 inch wafer in-plane }3 deg. (at 800 deg.)
n Compatible size of substrate
: 3 - 6 inch
n Wafer conveyance
: Single-wafer processing robot conveyance @
 (adapted to 25 cassettes)
n Treatment atmosphere
: Inert gas or during decompression
 (O2 or H2 atmosphere is an option)
n Standard size of equipment
F@960(W)~1,650(D)~1,450(H)igj
n Weight of equipment
: Approx. 850 kg


OS-3500 Series (Low-temperature type)

Specifications
n Suitable for Ohmic electrode alloy and anneal for the compound semiconductor for general purpose (GaAs system and InP system)
n Use of small-size special high-temperature furnace (MAX 550 deg.)
n Temperature zone for common use
: 300 - 500 degree Celsius (MAX 550 deg.)
n Distribution of in- plane temperature
: 4 inch wafer in-plane}2 deg. (at 450 deg.)
n Compatible size of substrate
: 3 - 6 inch
n Wafer conveyance
: Single-wafer processing robot conveyance @
 (adapted to 25 cassettes)
n Treatment atmosphere
: Inert gas or during decompression
 (H2 atmosphere is an option)
n Standard size of equipment
F@900(W)~1,210(D)~1,450(H)
n Weight of equipment
: Approx. 750 kg


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Batch-processing wafer annealing system
Vertical-type diffusion system
WET System
Contamination extraction system
Single wafer dual-side cleaning system
Single wafer lift-off system
RCA wet- and UV cleaning / complex system

CVD System
Laser abrasive CVD system
Diamond deposition system
ALD system
Electron beam vacuum deposition system

Etching System
Fully-automated etching system
Multipurpose etching & ashing system
Dry etching system for compound semiconductors
Multi-electrode dry etching system

UV optical application system
Electrodeless high-power UV opto-irradiation system
Desktop-type deep UV surface cleaning system
UV ashing system
Hard disk surface cleaning system

MEMS related system
KOH anisotropic etching system
Anodic bonding system for micro-machine

Inspection & measurement system
Atmospheric ion counter
Counter for particle in the liquid

Bio analyzing system
Microchip electrophoresis system

HandyMS(Small-size flight-time-type mass spectrometry system)


Special system & consignment development system
Small-size high-voltage generating system
Multifunctional etching system
Back-side etching system
Atmospheric-pressure plasma system for MEMS
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